Annealsys, TSMC and National Central University amorphous boron nitride
Aug. 03, 2022
Annealsys, TSMC and National Central University amorphous boron nitride
Ultralow-k Amorphous Boron Nitride Based on Hexagonal Ring Stacking Framework for 300 mm Silicon Technology Platform.
Montpellier, France, August 1st, 2022
Publication of work performed in cooperation between Taiwan Semiconductor Manufacturing Company, National Central University and Annealsys.
In this work, Annealsys laboratory has developed an amorphous boron nitride deposition recipe on 2-inch Si wafers using borazine precursor and vapor draw source on a Direct Liquid Injection CVD (DLI-CVD) machineMC-050. By employing remote microwave plasma, the deposition temperature could be as low as 370°C while keeping a dense material. The gas used in the process were found to be critical in achieving good B:N ratio (XPS: 0.84-1.12), and low dielectric constant k (@100 kHz: 2.22, @1014 kHz: 1.98). The results on Annealsys’ samples were amongst the best in this work with excellent density (2.3 g/cm3) and Young modulus (>100 GPa).
This success was made possible using the multi process capabilities of the MC-050 2-inch R&D system that includes: DLI-CVD, DLI-ALD, Plasma Assisted DLI-CVD and ALD, RTP, RTCVD, etc.
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