Annealsys extends RTP systems capability to ALD and doping processes
May. 02, 2022
Annealsys extends RTP systems capability to ALD and doping processes
Montpellier, France, May 2, 2022
Annealsys successfully transferred Atomic Layer Deposition and metal doping processes to on-site RTP systems. In a ALD process, sequential injection of precursors allows the depositions of atomically flat and controlled thickness thin films.
Two ALD processes have been developed: Al2O3 for applications in passivation, encapsulation and gas barrier, and ZnO, a wide band-gap semiconductor used in applications ranging from thin film transistors (TFTs) to solar cells.
The combination of ALD and RTP in a single and reliable Annealsys system opens the way to a broad variety of critical applications.
While the setup gives the opportunity to grow thin oxides, it also gives a reliable metal doping method. Precise doping levels and depths can be obtained by successive injections of a controlled amount of precursor followed by a precise in-situ fast annealing. Annealsys successfully applied such process in making Zn-doped thin films.
Download the release note for more information.
While the setup gives the opportunity to grow thin oxides, it also gives a reliable metal doping method. Precise doping levels and depths can be obtained by successive injections of a controlled amount of precursor followed by a precise in-situ fast annealing. Annealsys successfully applied such process in making Zn-doped thin films.
Download the release note for more information.
Download
Jan. 04, 2022 - Annealsys joins ECM GroupFeb. 09, 2022 - Annealsys introduces pulse annealingMay. 02, 2022 - Annealsys extends RTP systems capability to ALD and doping processesJul. 01, 2022 - Jipelec and Annealsys mergingAug. 03, 2022 - Annealsys, TSMC and National Central University amorphous boron nitride