Giant step-bunching occurrence during graphene growth
Dec. 21, 2020
Giant step-bunching occurrence during graphene growth on 4H-SiC(0001)
The main obstacle to the use of graphene on the industrial scale is the growth of a large and homogenous monolayer graphene. Haitham HRICH working at Laboratoire Charles Coulomb (L2C), UMR 5221 Université de Montpellier, France has presented at the Graphene 2020 the results of the work of L2C team in partnership with Annealsys. They have identified the state of art the parameters allowing the control of step bunching on SiC(0001).
Download the poster presented at the Graphene 2020, graphene and 2D material virtual conference.
Download the poster presented at the Graphene 2020, graphene and 2D material virtual conference.