The MC-100 has heating capability up to 800°C. It can be used for the deposition of oxides including epitaxial layers.
Simple and multi-metallic oxides
Metals, nitrides and alloys
III-V, wide band gap semiconductors
2D and 3D materials
The MC-100 with the rotating substrate heater and possibility to adjust the height of the substrate inside the reactor provides enhanced thin film uniformity.
The Annealsys MC-100 system is a 100 mm DLI-CVD / DLI-ALD reactor developed for research and development applications.
The process chamber enables to perform CVD and ALD processes inside the same process chamber.
The Direct Liquid Injection (DLI) vaporizers provide perfect control of precursor flow and allow utilization of low vapor pressure and diluted chemical precursors. The fast switching of the precursor vapor flows associated with the by-pass valve provide perfect interface control for deposition of nanolaminates.
The automated liquid panel has been optimized for reduced consumption of chemical precursors. The no dead volume design provides full rinsing capability for easy change of chemicals and refilling of the precursor tanks in a glove box.
The MC-100 system has been developed for research applications with limited requirements for maintenance and easy change of chemistry for depositing different type of layers.
Temperature range: RT to 800°C
Up to 4 vaporizers
Gas mixing capability with mass flow controllers
Vacuum range: Atmosphere to 10-3 Torr
Annealsys has developed state of the art liquid panels for the handling of air sensitive chemical precursors.