Annealsys introduces high temperature annealing furnace (up to 2000 C)

Nov. 18, 2014

Montpellier, France, November 18, 2014

Annealsys introduces the Zenith 100 furnace that can process a 100 mm (4-inch) substrate at temperature up to 2000C.

The system can be used for Silicon Carbide implantation annealing, graphene by high temperature SiC sublimation and CVD of graphene.

The system has a stainless steel water-cooled chamber. The cold wall chamber technology provides significant advantages: low memory effect, higher cooling rates.

The high temperature tungsten heaters provide fast heating rates and enhanced temperature uniformity.

Pyrometer and thermocouple temperature measurement are standard features.

The design of the process chamber provides easy loading and unloading of the substrates and easy installation of the thermocouple for calibration.

An industrial PLC guarantees a reliable control of the furnace while a PC provides an easy programming and monitoring machine.

Contact: Franck Laporte


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