DLI-CVD and DLI-ALD deposition system

Concernant ce produit

Applications

100 mm (4-inch) DLI-CVD / DLI-ALD deposition system

The MC-100 is a 4-inch (100 mm) Direct Liquid Injection deposition system that can perform CVD, ALD, pulse pressure CVD inside the same process chamber. Applications include epitaxy of oxide layers like LiNbO3.

Simple and multi-metallic oxides
Metals, nitrides and alloys
III-V, wide band gap semiconductors
2D and 3D materials
Etc.

Specifications

A 100 mm DLI-CVD / DLI-ALD reactor developed for research and development applications

The MC-100 with the rotating substrate heater and possibility to adjust the height of the substrate inside the reactor provides enhanced thin film uniformity.

The process chamber enables to perform CVD and ALD processes inside the same process chamber.

The Direct Liquid Injection (DLI) vaporizers provide perfect control of precursor flow and allow utilization of low vapor pressure and diluted chemical precursors. The fast switching of the precursor vapor flows associated with the by-pass valve provide perfect interface control for deposition of nanolaminates.

The automated liquid panel has been optimized for reduced consumption of chemical precursors. The no dead volume design provides full rinsing capability for easy change of chemicals and refilling of the precursor tanks in a glove box.

Characteristics

The MC-100 system characteristics

The MC-100 system has been developed for research applications with limited requirements for maintenance and easy change of chemistry for depositing different type of layers.

Temperature range: RT to 800°C
Up to 4 vaporizers
Gas mixing capability with mass flow controllers
Vacuum range: Atmosphere to 10-3 Torr

Optional features

Annealsys has developed liquid panels for the handling of air sensitive chemical precursors

Rough vacuum pump, Turbo pump
Motorized vacuum loadlock loading
ALD kit for water vapor delivery