The MC-200 is a versatile deposition system that can perform metal organic chemical vapor deposition (MOCVD) and atomic layer deposition (ALD) inside the same process chamber.
Simple and multi-metallic oxides
Metals, nitrides and alloys
III-V, wide band gap semiconductors
2D and 3D materials
For air sensitive applications the MC-200 can receive a motorized single wafer loadlock to isolate the process chamber from atmosphere.
The Annealsys MC-200 is a 200 mm thermally controlled wall CVD reactor specially developed to meet the requirements of research and development units for MOCVD processes.
The Direct Liquid Injection (DLI) vaporizers provide perfect control of precursor flow and allow utilization of low vapor pressure and diluted chemical precursors. The fast switching of the precursor vapor flows associated with the by-pass valve provide perfect interface control for deposition of nanolaminates.
A capacitance plasma option offers PE-CVD and PE-ALD capabilities for reducing the deposition temperature.
The system is made of several elements assembled using flanges. It makes it very versatile, easy to clean and easily modifiable for custom applications.
The simple shower head and reactor design makes it suitable for using low vapor and thermally unstable chemical precursors.
Temperature range: RT to 800°C
Up to 4 vaporizers
Gas mixing capability with mass flow controllers
Vacuum range: Atmosphere to 10-3 Torr
The MC-200 can be equipped with capacitance plasma substrate holder for PE-CVD and PE-ALD processes.