Jan. 28, 2013
Annealsys announced today the delivery of its AS-One 100 graphene CVD system to NCSR Demokritos in Athens, Greece.
The AS-One Rapid Thermal Processing has been specially developed to meet the requirements of universities, research laboratories, quality control and small-scale production. The system is available in 100 (4-inch) and 150 (6-inch) version.
The system has a stainless steel water-cooled chamber. The cold wall chamber technology provides significant advantages in terms of high process reproducibility, low memory effect and high cooling rates. The clam shell style design of the process chamber gives full access to the bedplate and provides easy loading and unloading of the samples.
Annealsys has developed a graphene CVD growth version of the AS-One 100 that includes the following features: high temperature version (up to 1420°C), process gas lines for carbon sources, downstream pressure control and soft pumping capability. An industrial PLC guarantees a reliable control of the AS-One system while a PC provides an easy programming and monitoring tool.
The AS-One was purchased by the Epitaxy and Surface Science Laboratory (ESSL) of the National Center for Scientific Research DEMOKRITOS in Athens Greece.
The laboratory (http://www.ims.demokritos.gr/MBE_LAB
) initially founded and operated as a molecular beam epitaxy facility has been engaged for more than ten years in research on high-k gate dielectrics and high mobility semiconductor channels for advanced CMOS, leading key European collaborative projects in the 5th, 6th and 7th Framework Programs of the EC.
With the new CVD-type of equipment such as AS-One and surface analytical tools already installed, the laboratory is well equipped to face the challenges of next generation post CMOS materials and devices based on 2D crystals. Graphene, the best known stable 2D crystal will be at the focus of our investigation with the new equipment AS-One.
Dr. Athanasios Dimoulas, head of ESSL has received an ERC/IDEAS Advanced Grant “SMARTGATE”-Smart gates for the “Green” Transistor (http://www.smartgate-erc.eu
) with the ambitious plan to integrate graphene in the gate of MOSFETs to produce steep slope switches operating at low supply voltage with small power consumption.
Besides, the Lab scientists expect that the versatility of AS-One offers the possibility for the growth of other 2D crystals such as layered atom-thick transition metal dichalcogenides which are at the hotspot of research for future ultrathin body devices or alternative versatile technologies.
Contact: Franck Laporte
Web site: www.annealsys.com