Annealsys RTP / RTCVD reactor technology

Advantages of cold wall chamber technology and Annealsys reactor design:

High process reproducibility
Low memory effect (Process chamber remains at the same temperature)
Higher cooling rates
Ultra clean and contamination-free environment
No metallic and no cross contamination
Accurate pyrometer temperature measurement (no signal from the lamps)
Low temperature pyrometer control (down to 150?C or less)
Fast digital PID temperature controller
Multi zone cross lamp furnace (AS-Premium & AS-Master)
Gas mixing capability
Uniform gas distribution over the sample
Atmospheric and standard vacuum capability, option turbo pump
Minimum volume, reduced surface for high vacuum performance
Easy chamber cleaning
Fast cooling optional feature

These features provide a high versatility of our systems and offer the widest range of Rapid Thermal Processing applications including resident reaction, surface interaction and deposition processes. It also allows the capability to anneal thermally sensitive substrates.

The cold wall chamber, the extended temperature range as well as the high vacuum capabilities offer the possibility to process high temperature resistant substrates (GaN, SiC, ceramics) as well as temperature sensitive substrates like polymers.

Processes:

Rapid thermal annealing (RTA)
Implant annealing
Contact annealing (III-V and SiC)
Rapid thermal oxidation (RTO)
Rapid thermal nitridation (RTN)
Annealing of piezoelectric and pyroelectric materials
Getter activation
Rapid Thermal Evaporation (RTE)
Selenization (CIGS solar cells)
Sol-gel densification and crystallization
Etc.