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Annealsys manufactures systems for Rapid Thermal Processing and Chemical Vapor Deposition.
Annealsys offer additional process solutions with ALD machines from Cambridge NanoTech (USA), laboratory sputtering systems from Intercovamex (Mexico) and sputtering and plasma equiment from FHR (Germany)

The Annealsys MC200 is a 200 mm MOCVD.
Capacitance plasma version is available.

Applications
Semiconductor: SiO2, HfO2, Ta2O5, Cu, TiN, TaN
High k Dielectric: SrTiO3, BaTiO3, Ba(1-x)SrxTiO3 (BST)
Ferroelectric: SBT, SBTN, PLZT, PZT,…
Superconductor: YBCO, Bi-2223, Bi-2212, Tl-1223, …
Piezoelectric: (Pb, Sr)(Zr,Ti)O3, Modified Lead Titanate
Colossal Magneto Resistance
Thermal coatings
Buffer layers
Etc…

Specifications
The Annealsys MC200 is a 200 mm thermally controlled wall CVD reactor especially developed to meet the requirements of research and development units for MOCVD processes.
A capacitance plasma option offer PE-MOCVD capabilities for reducing the deposition temperature.
The direct injection vaporizer allows the widest range of utilization of precursor to develop new materials.
Loadlock and glove box interface are available as optional features

Performance & characteristics
Temperature range: RT to 850°C
Up to 4 vaporizers
Vacuum range: Atmosphere to 10-3 Torr